Compare BJT and FET
Q.6 (c) Compare BJT and FET
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| Point | BJT | FET (JFET/MOSFET) |
|---|---|---|
| Carriers | Bipolar: both electrons and holes | Unipolar: only majority carriers |
| Control | Current-controlled device (IC = βIB) | Voltage-controlled device (ID controlled by VGS) |
| Terminals | Emitter, Base, Collector | Source, Gate, Drain |
| Input impedance | Low (kΩ) | Very high (MΩ for JFET, higher for MOSFET) |
| Noise | More noisy | Less noisy |
| Thermal stability | Less stable; thermal runaway possible | More stable; no thermal runaway |
| Gain | Higher voltage gain (gain-bandwidth product) | Lower voltage gain |
| Size / fabrication | Larger, more complex | Smaller, easy to fabricate in ICs (high packing density) |
| Offset voltage as switch | Has VCE(sat) offset | No offset voltage; good chopper/analog switch |
| Types | NPN, PNP | n-channel, p-channel (JFET, MOSFET) |
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· 25 Oct 2026
AI-verified · Oct 2026
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